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2SB1215T-H

Part No 2SB1215T-H
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 100V 3A TP  /  Bipolar (BJT) Transistor PNP 100 V 3 A 130MHz 1 W Through Hole TP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Product Status Not For New Designs
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V
Power - Max 1 W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Product Number 2SB1215
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2832-2SB1215T-H,2832-2SB1215T-H-488
Standard Package 500
Win Source Part Number 1193596-2SB1215T-H
Ultra Librarian 3D Model Ultra Librarian 2SB1215T-H CAD Model

Description

Product Overview: 2SB1215T-H from ON Semiconductor

The 2SB1215T-H is a high-performance PNP bipolar transistor from ON Semiconductor, designed to offer a blend of efficiency and reliability for a variety of electronic applications. This component is particularly well-suited for power amplification and switching purposes, where it can handle moderate power levels while maintaining a low saturation voltage, thereby ensuring energy-efficient operation.

Key Features

  • Low V<sub>CE(sat): One of the standout features of the 2SB1215T-H is its low collector-emitter saturation voltage, which minimizes power loss and improves overall efficiency in the circuit.
  • High Current Capacity: With a high collector current rating, this transistor can handle significant current loads, making it ideal for driving motors, solenoids, and other high-current devices.
  • Complementary Design: The 2SB1215T-H is designed to be complementary to ON Semiconductor's NPN transistors, allowing for easy implementation in push-pull configurations and other complementary applications.
  • Robustness: The device is built to withstand tough conditions, featuring a high breakdown voltage and a robust thermal performance for a longer operational lifespan.

Applications

The 2SB1215T-H transistor is versatile and can be used in various applications, including:

  • Power Supply Circuits
  • Audio Amplifiers
  • DC-DC Converters
  • Motor Controllers
  • Switching Regulators

Reliability and Quality

ON Semiconductor is known for its commitment to quality, and the 2SB1215T-H is no exception. It is manufactured using state-of-the-art processes, ensuring that each unit meets the company's stringent quality standards. The device's reliability is further enhanced by its ability to operate over a wide temperature range, making it suitable for industrial and automotive environments where conditions can be demanding.

Conclusion

With its combination of low power dissipation, high current capability, and robust design, the 2SB1215T-H from ON Semiconductor is an excellent choice for designers looking to optimize their power circuitry. Whether it's for amplification, switching, or any other power-related application, this bipolar transistor is engineered to deliver top-notch performance and reliability.

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