The SIHB17N80E-GE3 is an N-Channel 800V MOSFET from Vishay. This high-voltage MOSFET is designed for high-power switching applications where robust performance and reliability are critical. It features a low on-resistance, high avalanche energy capability, and fast switching speed, making it suitable for demanding applications such as power supplies and motor drives.

Applications:

• Power Factor Correction (PFC)
• High-Voltage Switching Power Supplies
• Motor Drives
• Lighting Ballasts
• Uninterruptible Power Supplies (UPS)

Features:

• N-Channel MOSFET
• 800V Drain-Source Voltage (VDS)
• Low On-Resistance (RDS(on))
• High Avalanche Energy
• Fast Switching Speed
• TO-220AB Package
• Halogen-free according to IEC 61249-2-21 Definition

Benefits:

• High Voltage Capability: 800V VDS allows for use in high-voltage applications.
• High Efficiency: Low on-resistance minimizes conduction losses, improving overall efficiency and reducing heat generation.
• Robust Performance: High avalanche energy capability provides robustness against voltage transients and inductive loads.
• Fast Switching: Fast switching speed reduces switching losses and enhances system performance.
• Reliable Operation: Vishay MOSFETs are designed for reliable performance in demanding applications.

Additional Details:

The SIHB17N80E-GE3 comes in a TO-220AB package. The specific RDS(on) values depend on the gate-source voltage (VGS) and drain current (ID). It is designed to be RoHS compliant. For detailed electrical characteristics, thermal performance, and application guidelines, refer to the datasheet. This MOSFET is suitable for high-power applications requiring high voltage capability and robust performance.