The Infineon Technologies IRF530NPBF MOSFET is a high-performance N-channel power transistor with a maximum drain-source breakdown voltage of 100V and a maximum continuous drain current of 17A @ 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 17A @ 25°C
• Power Dissipation: 70W
• Package: TO-220AB
• Applications: power supplies, motor controls, and lighting systems
• Features: low on-state resistance and a low gate charge
• Ideal for: high-speed switching applications
• Operating Temperature: -55°C to 175°C