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NTPF360N80S3Z

Part No NTPF360N80S3Z
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 13A TO220FP / N-Channel 800 V 13A (Tc) 31W (Tc) Through Hole TO-220FP
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series SuperFET® III
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 25.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1143 pF @ 400 V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number NTPF360
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353994-NTPF360N80S3Z
Ultra Librarian 3D Model Ultra Librarian NTPF360N80S3Z CAD Model

Description

The NTPF360N80S3Z is a high-performance, Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of power electronics in applications that require efficient power conversion and reliable switching performance.

Key Features

  • High Voltage Capability: With an 800V drain-to-source voltage (V<sub>DS), this MOSFET can handle high voltage applications with ease, making it suitable for industrial, lighting, SMPS, and PFC (Power Factor Correction) circuits.
  • Low R<sub>DS(on): The device boasts a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • Fast Switching Speed: The NTPF360N80S3Z is designed for fast switching applications, which is essential for reducing switching losses and improving power efficiency.
  • Robust Body Diode: The MOSFET features a robust body diode that can handle high surge currents, providing additional reliability in applications that involve inductive loads.

Applications

The versatility of the NTPF360N80S3Z makes it suitable for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Lighting applications, such as LED drivers
  • Industrial power applications
  • High-efficiency power converters

Package and Reliability

The NTPF360N80S3Z comes in a TO-220F package, which is known for its robustness and thermal efficiency. The package is designed to optimize the thermal performance and ensure reliability even under high temperature operating conditions. ON Semiconductor's commitment to quality ensures that this MOSFET meets the stringent reliability standards required for industrial and power applications.

Environmental Compliance

ON Semiconductor is dedicated to environmental stewardship. The NTPF360N80S3Z is compliant with RoHS (Restriction of Hazardous Substances) regulations, ensuring that it is free from harmful substances and suitable for use in environmentally sensitive applications.

With its combination of high voltage capability, low on-resistance, fast switching, and robust design, the NTPF360N80S3Z from ON Semiconductor is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3353 $53.4120
95+ $1.0957 $104.0915
145+ $1.0614 $153.9030
195+ $1.0272 $200.3040
255+ $0.9930 $253.2150
340+ $0.8902 $302.6680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 947 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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