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IRFR812TRPBF

Part No IRFR812TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3.6A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 78W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047093-IRFR812TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR812TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor that has a drain-source breakdown voltage of 500V and a continuous drain current of 3.6A @ 25°C.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 3.6A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 2.2 Ohm @ 2.2A and 10V
  • Package: D-Pak
  • Operating Temperature: -55°C to 150°C
  • Maximum Power Dissipation: 78W (Tc)
  • Maximum Gate Charge: 20nC @ 10V
  • Suitable for: discrete semiconductor products
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1721 $60.2699
45+ $2.6028 $117.1260
69+ $2.5215 $173.9835
95+ $2.4402 $231.8190
123+ $2.3587 $290.1201
164+ $2.1148 $346.8272
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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