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DMN33D8LT-7

Part No DMN33D8LT-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 115MA SOT523 / N-Channel 30 V 115mA (Ta) 240mW (Ta) Surface Mount SOT-523
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 115mA
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 48 pF @ 5 V
Power Dissipation (Max) 240mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package SOT-523
Case / Package SOT-523
Base Product Number DMN33
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 1324640-DMN33D8LT-7
Ultra Librarian 3D Model Ultra Librarian DMN33D8LT-7 CAD Model

Description

Product Overview: DMN33D8LT-7

The DMN33D8LT-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and produced by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is engineered to deliver efficient power control and switching in a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN33D8LT-7 boasts a low on-resistance, which ensures minimal power loss and heat generation during operation, leading to higher efficiency and reliability.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET can operate at higher frequencies, making it ideal for power regulation and conversion systems.
  • Low Threshold Voltage: The low threshold voltage feature allows for the device to be turned on with a relatively low gate voltage, which is beneficial for battery-operated devices and low power applications.
  • Surface-Mount Package: The DMN33D8LT-7 comes in a compact SOT-523 package, which is suitable for space-constrained applications and allows for efficient use of PCB real estate.

Applications

The DMN33D8LT-7 is versatile in its applications, catering to industries that require efficient power management and high-speed switching. Some common applications include:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Devices
  • Load/Power Switching
  • Motor Control Systems

Product Specifications

Below are the key electrical and thermal specifications of the DMN33D8LT-7:

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 7.5A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMN33D8LT-7 is no exception. It is produced in state-of-the-art facilities, ensuring high standards of manufacturing and testing. This product is RoHS compliant and follows the stringent quality control measures to provide customers with a reliable and consistent performance.

With its robust design, the DMN33D8LT-7 is a solid choice for designers looking for a MOSFET that offers efficiency, speed, and compactness for their power management and switching needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
855+ $0.0586 $50.1030
2,080+ $0.0481 $100.0480
3,220+ $0.0466 $150.0520
4,435+ $0.0451 $200.0185
5,735+ $0.0436 $250.0460
7,675+ $0.0391 $300.0925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 855 pcs
Order Increment : 1 pcs
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