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Same model may have multiple batches, images only for reference.
UNR511F00L Panasonic
Same model may have multiple batches, images only for reference.

UNR511F00L

Part No UNR511F00L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 150MW SMINI3
Datasheet
UNR511F00L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 80MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-G1
Win Source Part Number 101741-UNR511F00L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR511F00L CAD Model

Description

The Panasonic Electronic Components UNR511F00L is a PNP pre-biased transistor that is suitable for use in discrete semiconductor products.

  • Package: SMini3-G1 package
  • Maximum Current Collector: 100mA
  • VCEO maximum collector-emitter breakdown voltage: 50V
  • Max Vce (sat): 250mV @ 300μA, 10mA
  • Collector Cut-Off Current(Max): 500nA
  • Typical Gain (hFE) (Min): 30 @ 5mA, 10V
  • Maximum Power Dissipation: 150mW
  • Popularity: Medium

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