The IPB60R099P7ATMA1 MOSFET is an N-channel metal oxide field-effect transistor that is part of the CoolMOS P7 series.

• Type: Transistors - FETs, MOSFETs - Single
• Drain to Source Voltage (Vdss): 650 V
• Continuous Drain Current (Id): 31A (Tc) @ 25°C
• Rds On (Max): 99mOhm @ 10.5A and 10V
• Gate Charge (Qg) (Max): 45 nC @ 10V
• Input Capacitance (Ciss) (Max): 1952 pF @ 400 V
• Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Power Dissipation (Max): 117W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• REACH: Unaffected