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Same model may have multiple batches, images only for reference.
IXFH52N30Q Real Image
Same model may have multiple batches, images only for reference.

IXFH52N30Q

Part No IXFH52N30Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 52A TO-247AD
Datasheet
IXFH52N30Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 5300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049437-IXFH52N30Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH52N30Q CAD Model

Description

The IXYS IXFH52N30Q is a high-performance MOSFET designed for use in a variety of applications.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Maximum Power Dissipation: 360W
  • Maximum Continuous Drain Current: 52A
  • MOSFET Type: N-channel
  • Drain-Source Breakdown Voltage: 300V
  • Gate-Source Threshold Voltage: 4V
  • Package: Through-hole TO-247-3
  • Applications: motor control, power supplies, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.0652 $56.2608
9+ $11.5407 $103.8663
14+ $11.1800 $156.5200
19+ $10.8194 $205.5686
24+ $10.4587 $251.0088
32+ $9.3768 $300.0576
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Availability: 900 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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