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2SB1216S-TL-E

Part No 2SB1216S-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 4A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 500mV @ 200mA, 2A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 140 @ 500mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 125749-2SB1216S-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1216S-TL-E CAD Model

Description

ON Semiconductor 2SB1216S-TL-E PNP Transistor

The ON Semiconductor 2SB1216S-TL-E is a high-performance PNP bipolar transistor designed for use in a wide range of electronic applications. This semiconductor device is well-suited for power management functions and offers a complementary NPN type, making it ideal for push-pull configurations in amplification stages. The 2SB1216S-TL-E transistor is housed in a compact SOT-428 (SC-62) package, which is designed to optimize board space and ensure ease of integration into various circuit designs.

With its robust construction, the 2SB1216S-TL-E transistor provides excellent power dissipation capabilities, making it an efficient choice for handling moderate power levels in electronic circuits. It features a collector-emitter voltage (VCEO) of -50V and a collector current (IC) of up to -1A, which allows for the management of significant power within a small footprint. Additionally, the high current gain bandwidth product (fT) ensures that the transistor can operate effectively at high switching speeds, which is critical for applications requiring fast response times.

The ON Semiconductor 2SB1216S-TL-E also offers a low saturation voltage, which minimizes power loss and improves overall circuit efficiency. This characteristic is particularly important in applications such as low-voltage power supplies, motor controllers, and audio amplifiers where maintaining energy efficiency is crucial. Moreover, the device's high gain (hFE) ensures that it can be driven with lower base currents, thereby reducing the power required to control the transistor.

Engineers and designers will appreciate the reliability and performance of the 2SB1216S-TL-E transistor. Its lead-free and RoHS-compliant construction aligns with environmental standards, making it a responsible choice for modern electronic products. Whether used in consumer electronics, industrial systems, or automotive applications, the ON Semiconductor 2SB1216S-TL-E PNP transistor is a versatile component that delivers consistent performance and high reliability.

In summary, the ON Semiconductor 2SB1216S-TL-E is an excellent choice for designers looking for a PNP transistor that offers a balance of power handling, speed, and efficiency in a compact package. Its features make it a versatile component suitable for a variety of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5501 $52.2595
195+ $0.5147 $100.3665
305+ $0.4969 $151.5545
435+ $0.4614 $200.7090
565+ $0.4437 $250.6905
705+ $0.4259 $300.2595
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,750 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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