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2SB1216S-TL

Part No 2SB1216S-TL
Manufacturer ON Semiconductor
Catalog Electronic Wholesale
Sample
Rohs State Need to verify
ECAD Module
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Reference Date Code 01+
Reference case TO-252
Manufacturer ON Semiconductor
Manufacturer Homepage www.onsemi.com
RoHS State Request Verification
Win Source Part Number 751132-2SB1216S-TL
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1216S-TL CAD Model

Description

ON Semiconductor 2SB1216S-TL PNP Transistor

The ON Semiconductor 2SB1216S-TL is a high-performance PNP bipolar junction transistor (BJT) that is designed to meet the needs of a wide variety of electronic applications. This semiconductor device is well-suited for use in power management and signal amplification tasks, offering a blend of efficiency and reliability that ON Semiconductor is known for. The 2SB1216S-TL is housed in a compact SOT-428 (SC-62) package, making it an excellent choice for space-constrained applications.

Key Features

  • High Current Capability: The 2SB1216S-TL is capable of handling continuous collector currents up to -1 A, making it suitable for moderate power handling applications.
  • Low Saturation Voltage: This transistor offers a low collector-emitter saturation voltage, which ensures efficient operation and helps to minimize power loss during switching applications.
  • High Power Dissipation: With a power dissipation of 900 mW, this device can handle relatively high levels of power, making it ideal for a variety of power applications.
  • Fast Switching Speed: The fast switching response of the 2SB1216S-TL is beneficial for applications requiring quick transitions between on and off states.

Applications

The 2SB1216S-TL is versatile and can be used in a range of electronic circuits. Some common applications include:

  • Power supply circuits
  • Audio amplifiers
  • Signal processing
  • Motor control
  • Switching regulators
  • Driver stages in hi-fi amplifiers and television circuits

Product Specifications

With a collector-base voltage (VCBO) of -50 V and a collector-emitter voltage (VCEO) of -50 V, the 2SB1216S-TL can handle a wide range of operating conditions. The emitter-base voltage (VEBO) is rated at -5 V. The device also features a DC current gain (hFE) range of 100 to 320, which ensures a consistent and predictable amplification factor for your designs.

For engineers and designers looking for a reliable PNP transistor that offers a balance of performance and size, the ON Semiconductor 2SB1216S-TL is an excellent choice. Its robust construction and electrical characteristics ensure that it can be integrated into a variety of electronic products with confidence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8568 $58.2816
29+ $3.9859 $115.5911
45+ $3.8612 $173.7540
62+ $3.7364 $231.6568
80+ $3.6117 $288.9360
107+ $3.2386 $346.5302
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Availability: 2,280 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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