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2SC2812N6-TB-E

Part No 2SC2812N6-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.15A CP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 135 @ 1mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-CP
Win Source Part Number 114522-2SC2812N6-TB-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2812N6-TB-E CAD Model

Description

Product Overview: 2SC2812N6-TB-E by ON Semiconductor

The 2SC2812N6-TB-E is a high-performance NPN bipolar transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is engineered to offer excellent current amplification and switching capabilities, making it an ideal choice for a variety of electronic applications. Its compact SOT-346 package allows for efficient use of PCB space, which is crucial in modern compact electronic devices.

Key Features

  • Type: NPN Bipolar Transistor
  • Package: SOT-346 (SuperSOT-3)
  • Collector-Emitter Voltage (Vceo): 50V
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE): High
  • Operating Temperature Range: -55°C to +150°C
  • RoHS Compliant: Yes

The 2SC2812N6-TB-E transistor is designed to offer a balance between high current gain and low saturation voltage, providing efficient operation in amplification and switching tasks. The device's high hFE (current gain) ensures that a small base current can control a larger collector current, making it suitable for signal amplification in audio, sensor interfaces, and other low-power circuits.

With a collector-emitter voltage of 50V and collector current capability of 100mA, this transistor can handle moderate voltage and power levels, making it versatile for use in a range of applications from power management to driving small loads. Additionally, the power dissipation of 200mW indicates that the device can handle a fair amount of power without overheating, provided that proper thermal management practices are in place.

Its wide operating temperature range of -55°C to +150°C ensures reliability and stable performance under extreme environmental conditions, which is critical for industrial and automotive applications. The 2SC2812N6-TB-E is also RoHS compliant, meaning it meets the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment.

Whether you're designing consumer electronics, industrial control systems, or automotive modules, the 2SC2812N6-TB-E from ON Semiconductor offers the performance and reliability you need in a compact and energy-efficient package.

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