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2SC3142-4-TB-E

Part No 2SC3142-4-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description BIP NPN 30MA 20V / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 13394-2SC3142-4-TB-E
Ultra Librarian 3D Model Ultra Librarian 2SC3142-4-TB-E CAD Model

Description

Product Overview: 2SC3142-4-TB-E

The 2SC3142-4-TB-E is a high-performance NPN bipolar transistor from ON Semiconductor, a leading supplier in the semiconductor industry. This discrete semiconductor product is designed to meet the rigorous demands of modern electronic circuits, offering a fine balance between high current capacity and voltage handling capabilities.

Key Features

  • High Current Gain: The device features a high current gain (hFE), which allows it to amplify weak signals to higher levels, making it ideal for audio amplification and signal processing applications.
  • Low Saturation Voltage: It has a low collector-emitter saturation voltage, reducing power loss and improving efficiency in switching applications.
  • High-Speed Switching: Engineered for high-speed switching, the 2SC3142-4-TB-E can handle rapid transitions, which is essential for power regulators and converters.
  • Durable Construction: The transistor comes in a robust package that ensures long-term reliability and stability, even under challenging conditions.

Applications

The versatile nature of the 2SC3142-4-TB-E makes it suitable for a wide range of applications, including:

  • Power management circuits
  • Audio amplifiers
  • Signal processing
  • Switching regulators
  • Motor control circuits

Technical Specifications

The 2SC3142-4-TB-E boasts a comprehensive set of technical specifications, which include:

  • Transistor Polarity: NPN
  • Collector-Emitter Voltage (Vceo): Specified by the manufacturer
  • Collector-Base Voltage (Vcbo): Specified by the manufacturer
  • Emitter-Base Voltage (Vebo): Specified by the manufacturer
  • Collector Current (Ic): Specified by the manufacturer
  • Power Dissipation (Pd): Specified by the manufacturer
  • Operating Junction Temperature Range: Specified by the manufacturer

For detailed specifications and operational parameters, customers are advised to refer to the official datasheet provided by ON Semiconductor.

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability. The 2SC3142-4-TB-E is manufactured in state-of-the-art facilities, ensuring that it meets the stringent requirements of the electronics industry. With its excellent performance characteristics, this transistor is a reliable choice for designers and engineers looking to create efficient and durable electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2717 $63.5850
115+ $1.0430 $119.9450
175+ $1.0106 $176.8550
240+ $0.9783 $234.7920
310+ $0.9459 $293.2290
410+ $0.8478 $347.5980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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