2SC3395-TB-E Bipolar Transistor by ON Semiconductor
The 2SC3395-TB-E is a high-performance bipolar transistor manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This transistor is designed to offer excellent switching speeds and low saturation voltage, making it an ideal choice for a wide range of electronic applications.
Key Features:
- Device Type: NPN Bipolar Transistor
- Package: TO-92, a widely used through-hole package that is easy to handle and integrates well into various circuit designs.
- Collector-Emitter Voltage (Vceo): The transistor can handle a maximum voltage of 120V between the collector and emitter, providing a good margin for high-voltage applications.
- Collector Current (Ic): It supports a continuous collector current of up to 50mA, suitable for signal processing and amplification tasks.
- Power Dissipation (Pd): With a power dissipation of 400mW, it is capable of handling moderate power levels in electronic circuits.
- Transition Frequency (fT): The high transition frequency of 150MHz makes this transistor suitable for applications in radio-frequency (RF) circuits and high-speed switching.
- Gain Bandwidth Product (fT): The device offers a gain bandwidth product that ensures good amplification characteristics for audio and other signal processing tasks.
- Low Saturation Voltage: The low Vce(sat) helps in reducing power loss and improving efficiency, especially in switching applications.
- RoHS Compliant: This product meets the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and safe for use in electronic equipment.
Applications:
The 2SC3395-TB-E transistor is versatile and can be used in various applications such as:
- Audio frequency amplifier stages
- Signal processing circuits
- Switching regulators
- Driver stages in hi-fi amplifiers and television circuits
- RF circuits
ON Semiconductor's 2SC3395-TB-E is a reliable and efficient solution for designers who require a transistor that provides both high-speed operation and low power loss. Its robustness and compliance with environmental standards make it a sustainable choice for modern electronic devices.