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2SC3649S-TD-E

Part No 2SC3649S-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 1.5A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 450mV @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 5V
Maximum Power Dissipation 500mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 096361-2SC3649S-TD-E
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC3649S-TD-E CAD Model

Description

Product Overview: 2SC3649S-TD-E by ON Semiconductor

The 2SC3649S-TD-E is a high-performance NPN bipolar transistor designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This product is engineered for use in a variety of electronic applications where efficiency and reliability are of paramount importance.

Key Features

  • Transistor Type: The device is an NPN bipolar junction transistor (BJT), which is commonly used for amplification and switching purposes.
  • Voltage Ratings: It can handle a collector-base voltage (VCBO) of up to 50V, a collector-emitter voltage (VCEO) of 50V, and an emitter-base voltage (VEBO) of 5V. These voltage ratings ensure the transistor can be used in circuits with moderate voltage requirements.
  • Current Capacity: The 2SC3649S-TD-E has a continuous collector current (IC) rating of 150mA, making it suitable for driving small loads in electronic circuits.
  • Power Dissipation: With a power dissipation (PD) of 200mW, this component can handle a fair amount of power, which is essential for maintaining stability and performance in various applications.
  • High Gain Bandwidth Product: It features a high transition frequency (fT) of 250MHz, which makes it ideal for applications requiring high-speed switching and amplification.

Applications

The 2SC3649S-TD-E is versatile and can be utilized in a wide range of applications, including but not limited to:

  • Audio amplifiers and preamplifiers
  • Signal processing
  • Switching regulators
  • Driver stages in hi-fi systems
  • General-purpose switching and amplification tasks

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 2SC3649S-TD-E is built with this commitment in mind, ensuring that it meets the stringent standards required for commercial and industrial electronic devices. Its robust construction guarantees long-term reliability, making it a preferred choice for manufacturers looking for components with a proven track record of performance.

Environmental Compliance

The 2SC3649S-TD-E complies with RoHS (Restriction of Hazardous Substances) directives, which means it is manufactured with a focus on environmental safety and sustainability. Customers can be assured that they are choosing a product that not only delivers in terms of performance but also upholds environmental standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0187 $50.9350
120+ $0.8359 $100.3080
190+ $0.8098 $153.8620
260+ $0.7836 $203.7360
335+ $0.7575 $253.7625
445+ $0.6792 $302.2440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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