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2SC4555-6-TL-E

Part No 2SC4555-6-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description BIP NPN 0.5A 15V / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 14412-2SC4555-6-TL-E
Ultra Librarian 3D Model Ultra Librarian 2SC4555-6-TL-E CAD Model

Description

ON Semiconductor 2SC4555-6-TL-E NPN Bipolar Transistor

The 2SC4555-6-TL-E from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) that offers a blend of efficiency and reliability for a wide range of electronic applications. This versatile transistor is designed to meet the needs of various circuits, making it a popular choice for designers and engineers in the electronics industry.

Key features of the 2SC4555-6-TL-E include its compact SOT-23 package, which allows for efficient use of PCB space without compromising on power handling capabilities. The transistor is capable of handling collector currents up to 150mA, making it suitable for moderate power applications. With a collector-emitter voltage (Vceo) of 50V, it can operate in circuits with higher voltage requirements, providing flexibility in design.

The device boasts a transition frequency (ft) of 250MHz, which ensures high-speed switching and is ideal for applications requiring fast response times. This makes it an excellent choice for amplification and switching applications in consumer electronics, such as audio amplifiers, signal processing, and control systems.

Another significant advantage of the 2SC4555-6-TL-E is its low collector-emitter saturation voltage (Vce(sat)), which enhances its efficiency by minimizing power loss during operation. This feature is particularly beneficial in battery-powered devices, where energy conservation is critical.

The ON Semiconductor 2SC4555-6-TL-E also features high hFE (DC current gain) characteristics, ensuring that it can amplify weak signals without significant loss of fidelity. This characteristic is vital for applications in communication devices, sensors, and other electronic equipment requiring signal amplification.

For safety and reliability, the 2SC4555-6-TL-E is designed with robust thermal characteristics, ensuring stable operation over a wide temperature range. The device is also RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances in electronic components.

In summary, the ON Semiconductor 2SC4555-6-TL-E NPN bipolar transistor is a highly efficient, reliable component suitable for a diverse range of electronic applications. Its compact design, high-speed switching, low power loss, and high current gain make it an essential part of modern electronics design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,442 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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