The 2SC5228-4-TG is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This discrete semiconductor product is engineered to deliver reliable and efficient performance for a range of electronic applications, particularly in audio power amplifier stages and switch mode power supplies.
Key Features
- High Current Capability: The 2SC5228-4-TG is capable of handling high current loads, making it suitable for demanding applications.
- Low Saturation Voltage: It offers low collector-emitter saturation voltage, which results in lower power dissipation and improved efficiency.
- High Power Dissipation: With a high power dissipation rating, this transistor can withstand significant thermal stresses, ensuring durability and long-term reliability.
- Complementary PNP Type: ON Semiconductor provides a complementary PNP type transistor, allowing for flexibility in designing push-pull amplifier configurations.
Applications
The versatile nature of the 2SC5228-4-TG makes it suitable for a variety of applications, including:
- Audio Frequency Power Amplifiers
- Switch Mode Power Supplies (SMPS)
- DC-DC Converters
- General Purpose Switching
Product Specifications
Parameter
Value
Collector-Emitter Voltage (Vceo)
160V
Collector Current (Ic)
1.5A
Power Dissipation (Pd)
25W
DC Current Gain (hFE)
70 - 320
Operating Temperature Range
-55°C to +150°C
Quality and Reliability
ON Semiconductor is committed to the highest standards of quality and reliability. The 2SC5228-4-TG is produced in state-of-the-art facilities, ensuring that each component meets rigorous performance criteria. Customers can trust ON Semiconductor for consistent and dependable electronic components that drive their innovative projects.