2SC5551E-TD-E Transistor by ON Semiconductor

The 2SC5551E-TD-E is a high-performance NPN bipolar transistor from ON Semiconductor, designed for use in a wide range of electronic applications. This transistor is recognized for its outstanding switching speeds and excellent power handling capabilities, making it an ideal choice for high-frequency operation and power amplification tasks.

Key Features

• High Current Capacity: The 2SC5551E-TD-E can handle a significant amount of current, which is essential for applications requiring high power levels.
• High-Speed Switching: With its fast switching capabilities, this transistor is suitable for high-speed circuit designs, ensuring efficient operation and minimal signal delay.
• Low Saturation Voltage: The low V<sub>CE(sat) characteristic reduces power loss and improves efficiency, particularly in saturation-driven applications.
• Wide Operating Temperature Range: This device can operate effectively across a broad temperature range, ensuring reliability in various environmental conditions.
• High Breakdown Voltage: The high V<sub>CBO and V<sub>CEO ratings provide a margin of safety in circuits with high voltage requirements, preventing breakdown and ensuring longevity.

Applications

The 2SC5551E-TD-E transistor is suitable for a diverse set of applications, including:

• Power management circuits
• Switching regulators
• DC-DC converters
• Audio amplifiers
• Driver stages in high-fidelity amplifiers and sound systems
• Motor control circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the 2SC5551E-TD-E is no exception. It is manufactured to the highest standards, ensuring that it meets the rigorous demands of industrial and consumer applications. The device is also RoHS compliant, adhering to environmental regulations and minimizing the use of hazardous substances.

Technical Specifications

Here are some of the technical specifications for the 2SC5551E-TD-E:

• Configuration: Single
• Collector-Emitter Voltage V<sub>CEO: 230V
• Collector-Base Voltage V<sub>CBO: 230V
• Emitter-Base Voltage V<sub>EBO: 5V
• Collector Current - Continuous I<sub>C: 1A
• Power Dissipation P<sub>D: 900mW
• DC Current Gain h<sub>FE (Min) @ I<sub>C, V<sub>CE: 100 @ 100mA, 5V
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The 2SC5551E-TD-E from ON Semiconductor is a robust and versatile transistor that delivers performance, efficiency, and reliability for sophisticated electronic designs.