The 2SC5565-TD is a high-performance NPN bipolar transistor designed by ON Semiconductor, a leader in energy-efficient innovations. This transistor is specifically engineered to meet the demanding requirements of modern electronic circuits, providing a combination of high speed and low power consumption.

Key Features

• High Current Gain Bandwidth Product: The 2SC5565-TD boasts a high fT, making it suitable for applications that require fast switching and high-frequency operation.
• Low Collector-Emitter Saturation Voltage: This feature ensures lower power dissipation and improved efficiency, which is essential for power management in portable devices.
• High Power Dissipation: With its ability to dissipate higher amounts of power, this transistor can handle more significant loads, making it ideal for power amplification tasks.
• High Reliability: Manufactured by ON Semiconductor, the 2SC5565-TD is built to deliver consistent performance and long operational life, a hallmark of the brand's product quality.
• Compact Package: The transistor comes in a small-sized package, which is an advantage for space-constrained applications.

Applications

The 2SC5565-TD is versatile and can be used in various applications, including:

• Audio amplifiers and sound reproduction equipment
• Signal processing circuits where high-speed switching is required
• Driver stages in high-fidelity amplifiers and other audio applications
• Voltage regulation modules, contributing to stable power supply circuits
• General-purpose switching and amplification tasks

Product Specifications

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage VCEO Max xx V Collector-Base Voltage VCBO xx V Emitter-Base Voltage VEBO xx V Collector Current - Continuous IC xx A Power Dissipation Pd xx W Operating and Storage Junction Temperature Range xx to xx °C Package / Case xx

For detailed specifications and performance data, please refer to the official datasheet provided by ON Semiconductor.