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2SC5566-TD-E

Part No 2SC5566-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 4A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 225mV @ 100mA, 2A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 1.3W
Frequency - Transition 400MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 005903-2SC5566-TD-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC5566-TD-E CAD Model

Description

Overview of 2SC5566-TD-E from ON Semiconductor

The 2SC5566-TD-E is a high-performance NPN bipolar transistor designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This electronic component is engineered to deliver efficient performance in various applications, making it a versatile choice for designers and engineers seeking a reliable transistor for their circuits.

Key Features

  • High Current Gain Bandwidth Product: The 2SC5566-TD-E boasts a high fT, providing excellent frequency response characteristics for amplification purposes.
  • Low Collector-Emitter Saturation Voltage: This feature ensures minimal voltage drop across the transistor when it is in the on-state, leading to improved power efficiency.
  • Fast Switching Speeds: With its quick response time, the 2SC5566-TD-E is suitable for applications that require rapid switching, such as digital circuits.
  • Compact Package: Encased in a small surface-mount package, it occupies minimal space on a printed circuit board (PCB), making it ideal for compact electronic designs.

Applications

The 2SC5566-TD-E is designed for general-purpose amplification and switching applications. It is commonly used in:

  • Audio amplifiers and pre-amplifiers
  • Signal processing circuits
  • Power management systems
  • Driver stages in hi-fi systems
  • Switching regulators

Product Specifications

The transistor operates within a specified range of electrical parameters to ensure optimal performance:

  • Collector-Emitter Voltage (Vceo): Capable of withstanding voltages up to a specified limit when open circuited.
  • Collector Current (Ic): Supports a maximum continuous collector current without damage or degradation.
  • Power Dissipation (Pd): Rated for a maximum power dissipation, indicating the amount of heat it can handle without exceeding temperature limits.
  • Operating Temperature Range: Designed to operate effectively within a specified temperature range, ensuring stability and reliability across various conditions.

With its robust performance and ON Semiconductor's commitment to quality, the 2SC5566-TD-E is an excellent choice for designers who require a dependable and efficient transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3248 $50.3440
380+ $0.2665 $101.2700
585+ $0.2582 $151.0470
805+ $0.2498 $201.0890
1,040+ $0.2415 $251.1600
1,390+ $0.2165 $300.9350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,270 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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