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2SD1192

Part No 2SD1192
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans Darlington NPN 60V 10A 1750mW 3-Pin(3+Tab) TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 157586-2SD1192
Popularity Low
Supply and Demand Status Limited
Family Name 2SD1192
Introduction Date December 10, 2002
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SD1192 CAD Model

Description

ON Semiconductor 2SD1192 Transistor

The 2SD1192 is a high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed for use in a wide range of electronic applications, including power amplification and switching. It is known for its reliability, efficiency, and the ability to handle moderate power levels, making it a popular choice among engineers and designers.

Key Features:

  • High Current Capability: The 2SD1192 is capable of handling continuous collector currents up to 1A, which makes it suitable for driving medium-power circuits.
  • Low Saturation Voltage: It exhibits a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in saturation-driven applications.
  • High-Speed Switching: This transistor is designed for high-speed switching applications, providing quick response times and high-frequency operation.
  • Complementary PNP Type: The 2SD1192 has a complementary PNP type, the 2SB941, allowing for use in push-pull configurations and other complementary pair circuits.

Electrical Characteristics:

  • Collector-Emitter Voltage (V<sub>CEO): The maximum collector-emitter voltage is 80V, which is suitable for many medium-voltage applications.
  • Collector-Base Voltage (V<sub>CBO): It can withstand a collector-base voltage of 100V, providing a margin for high-voltage spikes and surges.
  • Emitter-Base Voltage (V<sub>EBO): The emitter-base voltage rating is 5V, ensuring stable operation even under varying conditions.
  • Collector Dissipation (P<sub>C): With a power dissipation of 900mW, the 2SD1192 can handle considerable thermal loads during operation.

Applications:

The versatility of the 2SD1192 transistor allows it to be used in a variety of applications such as:

  • Audio power amplifiers
  • Power supply regulators
  • DC-DC converters
  • Motor control circuits
  • Switching applications where medium power handling is required

With its robust construction and reliable performance, the ON Semiconductor 2SD1192 is an excellent choice for designers seeking a cost-effective and efficient solution for their medium-power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4239 $59.3460
335+ $0.3477 $116.4795
515+ $0.3373 $173.7095
710+ $0.3269 $232.0990
920+ $0.3153 $290.0760
1,225+ $0.2830 $346.6750
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Availability: 1,100 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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