The 2SD1628G-TD-H is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading provider in the semiconductor industry. This transistor is designed to meet the stringent requirements of modern electronic circuits, providing reliable operation and efficiency. It is commonly used in a variety of applications, including power management, amplification, and switching.

Key Features

• High Current Capacity: This transistor is capable of handling high current, making it suitable for power amplification and switching applications.
• Low Saturation Voltage: The 2SD1628G-TD-H offers low V<sub>CE(sat) which ensures lower power dissipation and improved efficiency.
• High-Speed Switching: Its design enables fast switching speeds, which is beneficial in applications requiring quick response times.
• Complementary PNP Type: The transistor has a complementary PNP type, which allows for its use in push-pull configurations and other complementary applications.

Applications

• Power Supply Circuits
• DC-DC Converters
• Audio Amplifiers
• Motor Controllers
• Switching Regulators

Product Specifications

Parameter Value Configuration Single Collector-Base Voltage (VCBO) 60 V Collector-Emitter Voltage (VCEO) 50 V Emitter-Base Voltage (VEBO) 5 V Collector Current (IC) 3 A Power Dissipation (Pd) 25 W Operating Temperature -55°C to +150°C

The 2SD1628G-TD-H transistor from ON Semiconductor is a robust and versatile component that offers the reliability and performance required for demanding electronic applications. Its high current capacity, low saturation voltage, and fast switching capabilities make it an excellent choice for designers looking to optimize their circuit designs.