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2SD1683S

Part No 2SD1683S
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 4A TO-126ML
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 100mA, 2A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 1.5W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-126ML
Win Source Part Number 197561-2SD1683S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1683S CAD Model

Description

ON Semiconductor 2SD1683S NPN Transistor

The ON Semiconductor 2SD1683S is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This small-signal transistor is notable for its excellent hFE linearity and is particularly suitable for audio frequency amplifier applications.

Key Features:

  • High Current Gain Bandwidth Product: The 2SD1683S offers a high fT (transition frequency), making it well-suited for applications requiring fast switching and amplification of high-frequency signals.
  • Low Collector-Emitter Saturation Voltage: This feature allows for efficient operation at low voltages, reducing power consumption and improving overall device performance.
  • High Power Dissipation: With an ability to handle a considerable amount of power, the 2SD1683S is capable of driving larger loads, making it versatile for both low and high power applications.
  • Complementary PNP Type Available: The 2SD1683S has a complementary PNP type transistor available, which is useful for push-pull amplifier configurations, enhancing design flexibility.

Applications:

The ON Semiconductor 2SD1683S is ideal for a variety of applications, including but not limited to:

  • Audio Amplifiers
  • Signal Processing
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits

Product Specifications:

Parameter Value Collector-Emitter Voltage (Vceo) 160V Collector Current (Ic) 1.5A Power Dissipation (Pd) 25W DC Current Gain (hFE) 60 to 320 Transition Frequency (fT) 80MHz

With its robust performance and reliable design, the ON Semiconductor 2SD1683S NPN transistor is an excellent choice for designers looking to create efficient and high-quality audio and signal processing circuits.

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