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2SD1801T-TL-E

Part No 2SD1801T-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 2A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 400mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 800mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 1004552-2SD1801T-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1801T-TL-E CAD Model

Description

ON Semiconductor 2SD1801T-TL-E NPN Bipolar Transistor

The 2SD1801T-TL-E from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This device is well-suited for switching and amplification purposes, offering a balance of good current handling and high voltage capabilities.

Constructed with ON Semiconductor's advanced technologies, the 2SD1801T-TL-E transistor features a collector-emitter voltage (V<sub>CEO) of 50V and a collector current (I<sub>C) of up to 3A, making it capable of handling moderate power applications. The device is also characterized by a collector power dissipation (P<sub>C) of 2W, ensuring reliable operation under various conditions.

The transistor comes in a compact SOT-428 package, also known as a TP-FA package, which is optimized for automated assembly processes and occupies minimal board space. This makes it an ideal choice for space-constrained applications. The small package size does not compromise its thermal performance, thanks to efficient heat dissipation properties.

With a transition frequency (f<sub>T) of 180MHz, the 2SD1801T-TL-E is suitable for high-speed switching applications. The high gain bandwidth product enhances its performance in amplifier circuits, making it a versatile component for audio, signal processing, and other high-frequency applications.

For those concerned with environmental standards, the 2SD1801T-TL-E is a RoHS-compliant product, meaning it is manufactured without the use of hazardous substances commonly found in electronic components. This compliance ensures that the product is suitable for use in environmentally sensitive markets and applications.

In summary, the ON Semiconductor 2SD1801T-TL-E NPN bipolar transistor offers a robust solution for designers looking for a high-performance switching and amplification component. With its high current and voltage handling capabilities, compact package, and compliance with environmental standards, it stands out as an excellent choice for a variety of electronic circuits.

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