The 2SD1835S-AA is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed to deliver efficient current amplification and switching with high reliability, making it a suitable choice for a wide range of applications in the electronics industry.

Key Features

• Voltage & Current Ratings: The 2SD1835S-AA boasts a collector-emitter voltage (Vceo) of up to 80V, and a collector current (Ic) rating of 3A, allowing it to handle moderate power levels in electronic circuits.
• High Gain Bandwidth Product: With a transition frequency (fT) of 100MHz, this BJT can operate efficiently at high frequencies, making it ideal for amplification in audio and RF applications.
• Low Saturation Voltage: The low Vce(sat) ensures lower power dissipation during the on-state, contributing to the overall efficiency of the device and the circuits it is used in.
• Complementary PNP Type: This product has a complementary PNP type, which allows for easy implementation in push-pull amplifier configurations and other complementary applications.
• Package: The 2SD1835S-AA comes in a TO-126 package, which is known for its compact size and ability to dissipate heat effectively.

Applications

The versatile nature of the 2SD1835S-AA makes it suitable for various applications, including:

• Power amplifiers
• Audio amplifiers
• Switching regulators
• Driver stages in hi-fi amplifiers
• Signal processing

Reliability and Quality

ON Semiconductor is committed to delivering high-quality products. The 2SD1835S-AA is built to meet rigorous standards, ensuring reliability and performance consistency. The device undergoes extensive testing to guarantee it can withstand the demands of various operating conditions.

Environmental Compliance

The 2SD1835S-AA is designed with environmental sustainability in mind. It complies with RoHS directives, ensuring that it is free from hazardous substances and suitable for use in green electronics.