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2SD734-G

Part No 2SD734-G
Manufacturer ON Semiconductor
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 06+
Reference case TO-92L
Manufacturer ON Semiconductor
Manufacturer Homepage www.onsemi.com
Win Source Part Number 751258-2SD734-G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD734-G CAD Model

Description

Product Overview: 2SD734-G by ON Semiconductor

The 2SD734-G is a high-performance NPN bipolar transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is engineered to deliver reliable and efficient performance for a wide range of electronic applications. The 2SD734-G is well-suited for use in power amplification and switching applications that require moderate power handling and high-speed operation.

Key Features:

  • High Current Capacity: The 2SD734-G is capable of handling significant current levels, making it an excellent choice for power amplification circuits.
  • Low Saturation Voltage: It exhibits a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in operation.
  • Fast Switching Speed: This transistor is characterized by its fast switching capabilities, enabling high-speed operation in electronic circuits.
  • Robust Design: The 2SD734-G is built to withstand tough conditions and offers a reliable performance over a wide range of temperatures and operating environments.
  • Compact Package: Encased in a TO-92 package, the 2SD734-G is designed for optimal thermal performance and space-saving on printed circuit boards (PCBs).

Applications:

The versatility of the 2SD734-G makes it suitable for an array of applications, including but not limited to:

  • Audio Power Amplifiers
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Systems
  • Switching Regulators

Technical Specifications:

Before integrating the 2SD734-G into your design, please review the following technical specifications:

  • Collector-Emitter Voltage (Vceo): 60V
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 900mW
  • DC Current Gain (hFE): 40 to 320
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

For detailed information and the full datasheet, please visit the ON Semiconductor website or contact their support team. Ensure that the 2SD734-G meets the requirements of your application for optimal performance and reliability.

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