The 2SK3617-TL-E is a high-performance N-Channel MOSFET from ON Semiconductor, designed to deliver efficiency and power for a wide range of applications. This semiconductor device is known for its low on-state resistance and high switching speed, making it an ideal choice for power management tasks.

Key Features

• Device Type: N-Channel MOSFET
• Package: TO-252 (DPAK) surface-mount package for compact design
• Drain-Source Voltage (V<sub>DS): 60V, providing a good balance between performance and robustness for various applications
• Continuous Drain Current (I<sub>D): 50A, ensuring high current handling capability
• Gate-Source Voltage (V<sub>GS): ±20V, offering flexibility in gate drive design
• Total Power Dissipation (P<sub>D): 45W at 25°C, indicating the MOSFET's ability to handle significant power levels
• Low On-State Resistance (R<sub>DS(on)): Minimizes conduction losses and improves overall efficiency
• Fast Switching Speed: Enhances performance in high-frequency applications
• Operating Temperature Range: -55°C to +150°C, suitable for extreme environmental conditions

Applications

The 2SK3617-TL-E MOSFET is versatile and can be used in various applications, including:

• Switching regulators
• DC-DC converters
• Motor drives
• Power supplies
• Automotive applications
• Other high-efficiency power management systems

Reliability and Quality

ON Semiconductor is committed to providing high-quality products. The 2SK3617-TL-E MOSFET is manufactured with rigorous standards, ensuring reliability and performance consistency for industrial and commercial use. Its robust package and thermal characteristics ensure that this device will continue to operate under stress and in harsh environments.