The 2SK536-TB-E is a high-performance N-channel MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and signal processing capabilities.

Key Features

• Low On-Resistance: The 2SK536-TB-E features a low on-resistance, which minimizes power loss and improves overall efficiency, making it ideal for power-intensive applications.
• High-Speed Switching: This MOSFET is capable of high-speed switching, which is essential for applications that require quick response times and high-frequency operation.
• Gate Charge: It has been optimized for reduced gate charge, which leads to lower switching losses and better performance in applications where switching frequency is critical.
• High Drain-Source Voltage: The device can handle a high drain-source voltage, offering designers flexibility in higher voltage applications and ensuring reliable operation under stress conditions.
• Compact Design: The 2SK536-TB-E comes in a small package, making it suitable for compact designs where space is at a premium.

Applications

The versatility of the 2SK536-TB-E allows it to be used in a wide range of applications, including:

• Power Supplies
• DC-DC Converters
• Motor Drives
• Switching Regulators
• LED Lighting
• Automotive Applications

Reliability and Quality

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The 2SK536-TB-E is no exception, undergoing rigorous testing to ensure it performs to specifications across a range of environmental conditions.

Environmental Compliance

The 2SK536-TB-E is designed with environmental responsibility in mind. It complies with RoHS directives, ensuring that it is free from hazardous substances and suitable for use in green electronics.