The 3LN02M-TL-E is a high-performance N-channel MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet a wide range of applications, offering a perfect blend of low on-state resistance and high switching speed. The device is housed in a compact SOT-23 package, making it ideal for space-constrained applications.

Key Features

• Low On-Resistance: The 3LN02M-TL-E features an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
• High-Speed Switching: Engineered for fast switching performance, this MOSFET enables high-speed operation in switching applications, which is vital for reducing switching losses and improving response times.
• Low Gate Charge: The low gate charge characteristic of this device allows for faster switching with lower drive power, contributing to the efficiency of the overall system.
• Compact Size: Packaged in a small SOT-23 form factor, the 3LN02M-TL-E is suitable for use in portable devices where space is at a premium.
• Versatile Use: With its robust performance features, this MOSFET is versatile enough to be used in a variety of applications, including power management, load switching, and motor control circuits.

Applications

• Power Management
• DC/DC Converters
• Battery Powered Devices
• Load Switching
• Motor Control

Specifications

Parameter Value Package SOT-23 Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 100mA Power Dissipation (P<sub>D) 150mW Operating Temperature Range -55°C to +150°C

With its robust set of features, the 3LN02M-TL-E from ON Semiconductor stands out as a highly efficient solution for designers looking to optimize their power management and switching applications. Its superior performance, combined with ON Semiconductor's commitment to quality, makes it an excellent choice for your circuitry needs.