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BC817-25LT1G

Part No BC817-25LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.5A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 100mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 011087-BC817-25LT1G
Family Name BC817-25L
Introduction Date July 30, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Safety
Ultra Librarian 3D Model Ultra Librarian BC817-25LT1G CAD Model

Description

ON Semiconductor BC817-25LT1G NPN Bipolar Junction Transistor

The BC817-25LT1G is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This versatile transistor is well-suited for a wide range of applications, from switching operations to amplification tasks in various electronic circuits. With its compact SOT-23 package, it is ideal for space-constrained designs, offering a practical solution for modern electronics where efficiency and size are critical factors.

Key Features:

  • Device Type: NPN bipolar junction transistor (BJT)
  • Package: SOT-23, a small surface-mount package that is ideal for automated assembly processes
  • Collector-Emitter Voltage (Vceo): 45V, allowing it to handle moderate voltage applications
  • Collector Current (Ic): Up to 500 mA, providing sufficient current for a variety of electronic circuits
  • DC Current Gain (hFE): 160-400 at 100 mA, ensuring good amplification characteristics
  • Transition Frequency (fT): 100 MHz, which enables the transistor to operate effectively at high switching speeds
  • Power Dissipation (Pd): 300 mW, ensuring the device can handle a reasonable amount of power without overheating
  • Operating Temperature Range: -55°C to +150°C, providing reliability over a broad range of ambient temperatures
  • Compliance: RoHS compliant, ensuring environmental safety and global acceptance

Applications:

The BC817-25LT1G is a versatile component that can be used in various electronic applications including, but not limited to:

  • General-purpose switching and amplification
  • Driver stages in audio amplifiers
  • Signal processing
  • Power management
  • Control systems
  • Consumer and industrial electronics

ON Semiconductor's BC817-25LT1G NPN transistor is a testament to the company's dedication to providing high-quality, reliable components for the electronics industry. Its combination of high current capacity, voltage handling, and speed makes it an excellent choice for designers looking to create efficient and compact electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,840+ $0.0272 $50.0480
3,925+ $0.0255 $100.0875
6,100+ $0.0246 $150.0600
8,735+ $0.0229 $200.0315
11,365+ $0.0220 $250.0300
14,155+ $0.0212 $300.0860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 240,000 pieces
MOQ: 1840 pcs
Order Increment : 1 pcs
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