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BC818-40LT1G

Part No BC818-40LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 0.5A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 250 @ 100mA, 1V
Maximum Power Dissipation 225mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 097476-BC818-40LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC818-40LT1G CAD Model

Description

ON Semiconductor BC818-40LT1G Bipolar Transistor

The BC818-40LT1G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This small signal transistor is particularly suitable for amplification and switching applications, offering a balance of good linearity and high gain. It is a versatile component that complements a variety of circuits, from audio amplifiers to signal processing units and power management systems.

The BC818-40LT1G comes in a compact SOT-23 package, which is ideal for space-constrained applications. Despite its small size, it boasts a collector-emitter voltage (Vceo) of 30 volts and a collector current (Ic) of up to 500 mA, making it capable of handling moderate power levels in a circuit. The device also features a collector-base voltage (Vcbo) of 30 volts and an emitter-base voltage (Vebo) of 5 volts.

With a transition frequency (fT) of 100 MHz, the BC818-40LT1G is suitable for high-frequency operations, ensuring that it can be used in applications requiring fast switching and signal processing. The transistor also exhibits a low collector-emitter saturation voltage, which results in reduced power dissipation and improved efficiency, making it an energy-conscious choice for designers.

One of the key advantages of the BC818-40LT1G is its hFE (DC current gain) grouping, which is specified at 250 to 600. This feature ensures consistent performance across different devices, providing a reliable gain characteristic for precision applications. The high current gain bandwidth product further enhances its suitability for amplification purposes.

ON Semiconductor's commitment to quality is evident in the BC818-40LT1G, which is designed to meet or exceed the stringent requirements of the industrial and consumer electronics markets. Whether used in discrete logic circuits, power switches, or as a driver for LEDs and other low-power components, this transistor is an excellent choice for engineers looking for a reliable and efficient solution.

Overall, the BC818-40LT1G is a testament to ON Semiconductor's dedication to providing high-quality, high-performance semiconductor products. Its robustness, combined with its electrical characteristics, makes it a valuable component for a multitude of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,120+ $0.0236 $50.0320
5,185+ $0.0193 $100.0705
8,025+ $0.0187 $150.0675
11,050+ $0.0181 $200.0050
14,290+ $0.0175 $250.0750
19,110+ $0.0157 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 193,000 pieces
MOQ: 2120 pcs
Order Increment : 1 pcs
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