The BC847BPDW1T1G is a high-performance, dual NPN bipolar (BJT) transistor manufactured by ON Semiconductor. This device is housed in a compact SOT-363 surface-mount package, making it ideal for high-density circuit board applications. It is designed to deliver efficient current control in a wide range of electronic applications, from low-power signal amplification to more demanding power management tasks.

Key Features

• Transistor Type: Dual NPN Bipolar Junction Transistor (BJT)
• Configuration: Dual Transistor, Monolithic Construction
• Package: SOT-363 Surface-Mount
• Collector-Emitter Voltage (V_CEO): 45 V
• Collector-Base Voltage (V_CBO): 50 V
• Emitter-Base Voltage (V_EBO): 6 V
• Collector Current - Continuous (I_C): 100 mA
• DC Current Gain (h_FE): 200 to 450 at 2 mA, V_CE = 5 V
• Power Dissipation (P_D): 250 mW
• Operating and Storage Junction Temperature Range: -55°C to +150°C

Applications

The BC847BPDW1T1G is versatile and can be used in various applications. Its dual transistor configuration makes it suitable for space-constrained designs. Common applications include:

• General-purpose amplification
• Switching circuits
• Audio amplifiers
• Signal processing
• Power management
• Voltage regulation

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability. The BC847BPDW1T1G is produced with stringent quality control processes, ensuring high reliability and performance consistency. This device complies with the RoHS directive, making it an environmentally friendly choice for electronic designs.

Whether you are designing consumer electronics, industrial control systems, or automotive applications, the BC847BPDW1T1G from ON Semiconductor provides a reliable and efficient solution for your NPN bipolar transistor needs.