ON Semiconductor BC847CLT3G - NPN Bipolar Transistor

The BC847CLT3G is a high-quality NPN bipolar (BJT) transistor manufactured by ON Semiconductor, a leader in the semiconductor industry. This small signal transistor is designed for general purpose and amplifier applications. It is a versatile component that is widely used in a variety of electronic circuits due to its efficiency and reliability.

The BC847CLT3G features a collector-emitter voltage (Vceo) of 45V, and a collector current (Ic) of 100mA, making it suitable for moderate power handling applications. It also has a collector-base voltage (Vcbo) of 50V and an emitter-base voltage (Vebo) of 5V. Its power dissipation is rated at 250mW, which allows for satisfactory performance in a compact form factor.

This transistor is known for its low noise figure, which makes it an excellent choice for audio amplification and processing applications where signal integrity is crucial. Additionally, the BC847CLT3G has a DC current gain (hFE) range from 200 to 450, ensuring a consistent and predictable amplification factor for signals passing through it.

The device comes in a SOT-23 package, which is a surface-mount technology (SMT) package. This small package is ideal for space-constrained applications and allows for high-density mounting on printed circuit boards (PCBs). The SOT-23 package also provides good thermal performance for its size.

ON Semiconductor has designed the BC847CLT3G with environmental consciousness in mind. It is a RoHS-compliant product, meaning it is free from hazardous substances such as lead, mercury, and cadmium. This compliance ensures that the product is suitable for use in electronic equipment that must meet strict environmental standards.

In summary, the BC847CLT3G from ON Semiconductor is a reliable and efficient NPN transistor that offers a combination of good electrical performance, low noise, and compact packaging. It is an excellent choice for designers looking for a general-purpose transistor that can be used in a wide range of applications while meeting environmental regulations.

Specifications:

• Transistor Type: NPN
• Collector-Emitter Voltage (Vceo): 45V
• Collector-Base Voltage (Vcbo): 50V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• DC Current Gain (hFE): 200 to 450
• Power Dissipation (Pd): 250mW
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• RoHS Compliant: Yes