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BC848CPDW1T1G

Part No BC848CPDW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 30V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 250mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 011137-BC848CPDW1T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC848CPDW1T1G CAD Model

Description

Product Overview: BC848CPDW1T1G

The BC848CPDW1T1G is a high-performance, small-signal NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading company in the semiconductor industry. This component is well-suited for a wide range of applications that require low-power amplification and switching.

Key Features

  • Transistor Type: The BC848CPDW1T1G is an NPN transistor, which is commonly used for amplification and switching purposes in electronic circuits.
  • Configuration: It comes in a dual configuration, meaning there are two independent transistors in a single package, which helps in reducing the board space and simplifies the design process.
  • Package: This transistor is available in a surface-mount SOT-363 package, making it ideal for compact and densely populated PCBs.
  • DC Current Gain (hFE): It offers excellent current gain characteristics with a high hFE value, ensuring efficient current amplification in the circuit.
  • Voltage Ratings: The BC848CPDW1T1G is designed to handle a collector-emitter voltage (VCEO) of 30V, which makes it suitable for a variety of electronic applications.
  • Current Rating: With a continuous collector current (IC) rating of 100 mA, this transistor can manage moderate current loads effectively.
  • Power Dissipation: The device has a power dissipation of 250 mW, which is adequate for many low-power applications.
  • RoHS Compliant: ON Semiconductor ensures that the BC848CPDW1T1G complies with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment.

Applications

The BC848CPDW1T1G is versatile and can be used in various applications such as:

  • General-purpose amplification
  • Switching applications
  • Signal processing
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits

Conclusion

ON Semiconductor's BC848CPDW1T1G offers reliable performance in a compact package, making it a preferred choice for designers who require efficient and space-saving components for their electronic designs. Its dual NPN configuration, high current gain, and compliance with environmental standards make it a sustainable and practical solution for a multitude of electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,430+ $0.0238 $57.8340
5,885+ $0.0196 $115.3460
9,150+ $0.0189 $172.9350
12,580+ $0.0184 $231.4720
16,235+ $0.0178 $288.9830
21,740+ $0.0159 $345.6660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 2430 pcs
Order Increment : 3000 pcs
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