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BC856BWT1G

Part No BC856BWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 65V 0.1A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 220 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 011148-BC856BWT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian BC856BWT1G CAD Model

Description

ON Semiconductor BC856BWT1G PNP Transistors

The ON Semiconductor BC856BWT1G represents a series of high-performance PNP bipolar transistors designed for general-purpose use in a wide array of electronic applications. These transistors are particularly well-suited for use in switching and amplification circuits thanks to their efficient current handling and low voltage operation capabilities.

Constructed with ON Semiconductor's innovative technology, the BC856BWT1G transistors offer a collector-emitter voltage (VCEO) of -65V, and a collector current (IC) of -100mA, making them robust components for a variety of electronic circuits. The device also features a low collector-emitter saturation voltage, reducing power loss and improving efficiency in operation.

The BC856BWT1G comes in a compact SOT-323 package, which is ideal for space-constrained applications. This small form factor allows for high-density mounting and is compatible with automated assembly processes, thus facilitating mass production and reducing manufacturing costs.

Key specifications of the BC856BWT1G include:

  • PNP bipolar transistor configuration
  • Collector-Emitter Voltage (VCEO): -65V
  • Collector Current (IC): -100mA
  • Power Dissipation (Pd): 250mW
  • DC Current Gain (hFE): 220 to 475 at IC = -2mA
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

These transistors are also recognized for their reliability and consistent performance, which is a hallmark of ON Semiconductor's products. The BC856BWT1G is designed to meet the stringent requirements of the industrial market, ensuring long-term stability and performance in challenging conditions.

Applications for the BC856BWT1G include but are not limited to signal processing, power management, and various types of control systems. Whether it's for audio amplifiers, switch mode power supplies, or other low power applications, these transistors can provide the necessary performance and efficiency.

ON Semiconductor is committed to environmental stewardship, and the BC856BWT1G transistors are produced with green manufacturing processes, free from lead and other harmful substances, complying with the RoHS directive. This makes them not only a technologically advanced choice for your electronic designs but also an environmentally responsible one.

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Pricing & Ordering

Quantity Unit Price Ext. Price
715+ $0.0704 $50.3360
1,735+ $0.0578 $100.2830
2,680+ $0.0560 $150.0800
3,695+ $0.0542 $200.2690
4,775+ $0.0524 $250.2100
6,385+ $0.0470 $300.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 715 pcs
Order Increment : 1 pcs
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