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BC858CDW1T1G

Part No BC858CDW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 30V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 1022521-BC858CDW1T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC858CDW1T1G CAD Model

Description

ON Semiconductor BC858CDW1T1G PNP Transistor

The BC858CDW1T1G from ON Semiconductor is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This semiconductor device is part of ON Semiconductor's broad portfolio of transistors, which are renowned for their reliability and performance. The BC858CDW1T1G is specifically crafted to meet the needs of electronic circuits requiring low-power and medium voltage operation.

Key Features:

  • Transistor Type: PNP - This transistor is a PNP type, which means it is turned on when a small current flows through the base in the direction opposite to the electron flow.
  • Configuration: Single - It is a single transistor device, which makes it suitable for applications where one transistor is sufficient to perform the necessary operation.
  • Collector- Emitter Voltage (Vceo): 30V - The maximum voltage that can be applied from collector to emitter (with the base open) is 30 volts, making it ideal for medium voltage applications.
  • Collector Current - Continuous (Ic): 100mA - It can handle a continuous collector current of up to 100 milliamperes.
  • Power Dissipation (Pd): 250mW - The maximum power dissipation of this transistor is 250 milliwatts, which helps to prevent overheating during operation.
  • DC Current Gain (hFE): 200 at 2mA, 5V - The transistor has a DC current gain of 200 when operating at 2mA and 5V, ensuring efficient amplification.
  • Operating Temperature: -55°C to +150°C - The device can operate over a wide temperature range, making it suitable for various environmental conditions.
  • Mounting Type: Surface Mount - This component is designed for surface mounting, which makes it ideal for use in compact and high-density PCB designs.
  • Package / Case: SOT-323-3 - The BC858CDW1T1G comes in a small SOT-323-3 package, which is conducive for space-saving designs.

With its excellent amplification characteristics and switching capabilities, the BC858CDW1T1G is a versatile component that can be utilized in a diverse range of electronic applications. Whether you're designing audio amplifiers, signal processing circuits, or looking for a reliable switch for your digital devices, this PNP transistor from ON Semiconductor is a solid choice that combines performance with cost-effectiveness.

ON Semiconductor is known for its commitment to sustainability and quality, and the BC858CDW1T1G is a testament to their dedication to providing components that meet stringent standards and are environmentally friendly.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,310+ $0.0443 $58.0330
3,175+ $0.0364 $115.5700
4,920+ $0.0353 $173.6760
6,780+ $0.0341 $231.1980
8,775+ $0.0330 $289.5750
11,720+ $0.0296 $346.9120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,400 pieces
MOQ: 1310 pcs
Order Increment : 1 pcs
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