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BC859BLT1

Part No BC859BLT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT-23
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 220 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 098653-BC859BLT1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC859BLT1 CAD Model

Description

ON Semiconductor BC859BLT1 PNP Transistor

The BC859BLT1 from ON Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for use in a variety of applications that require low power and medium voltage operation. This versatile transistor is housed in a compact SOT-23 package, making it suitable for use in space-constrained applications.

The BC859BLT1 features a collector-emitter voltage (VCEO) of -30V and a collector current (IC) of -100mA, making it ideal for amplification and switching applications. With a power dissipation of 300mW, it can handle moderate power levels, while its high current gain bandwidth product (fT) of 100MHz ensures good high-frequency performance.

This transistor is characterized by a low collector-emitter saturation voltage, which translates to efficient operation and reduced power losses in saturation mode. Additionally, the BC859BLT1 offers excellent linearity, making it a suitable choice for audio amplification and signal processing where fidelity is crucial.

ON Semiconductor's commitment to quality is evident in the BC859BLT1's robust construction and performance. The device is designed for reliable operation over a wide range of ambient temperatures, from -55°C to +150°C, ensuring stability and functionality in diverse environmental conditions.

Applications for the BC859BLT1 are diverse and include, but are not limited to, driver stages in hi-fi amplifiers, signal processing, and general-purpose switching. Its low noise figure also makes it well-suited for use in sensitive audio and RF applications where signal integrity is paramount.

For designers and engineers looking for a reliable PNP transistor with a good balance of speed, power, and performance, the BC859BLT1 from ON Semiconductor is an excellent choice. Whether it's for consumer electronics, industrial control systems, or automotive applications, this transistor is engineered to deliver consistent performance and help drive innovation in electronic design.

For detailed specifications, application circuits, and additional information, refer to the official datasheet provided by ON Semiconductor.

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