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BCW30LT1G

Part No BCW30LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 0.1A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 215 @ 2mA, 5V
Maximum Power Dissipation 300mW
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 096530-BCW30LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCW30LT1G CAD Model

Description

The BCW30LT1G is a high-performance PNP bipolar junction transistor (BJT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This small-signal transistor is designed for general-purpose amplification and switching applications. The BCW30LT1G is well-suited for a wide range of electronic circuits, offering reliability and efficiency in a compact SOT-23 package.

Key Features:

  • Transistor Polarity: PNP - This means the transistor requires a negative base current to turn on, suitable for use in various circuit configurations where a PNP transistor is needed.
  • Collector-Emitter Voltage (Vceo): 32V - This is the maximum voltage the transistor can withstand from the collector to the emitter when the base is open. It provides a good margin for many electronic applications.
  • Collector Current (Ic): 100mA - The BCW30LT1G can handle a continuous collector current up to 100mA, making it suitable for small to medium power requirements.
  • Power Dissipation (Pd): 225mW - The maximum power the transistor can dissipate without exceeding its maximum junction temperature, ensuring stable operation under normal conditions.
  • DC Current Gain (hFE): 220 to 470 - A measure of the transistor's amplification factor in direct current, indicating the transistor's ability to amplify a signal.
  • Operating Temperature Range: -55°C to +150°C - The BCW30LT1G can operate effectively within a wide temperature range, making it versatile for various environments.
  • Package: SOT-23 - A small and efficient surface-mount package that saves space on printed circuit boards (PCBs).

Applications:

The ON Semiconductor BCW30LT1G PNP transistor is ideal for a variety of applications, including but not limited to:

  • Signal amplification in audio and communication devices
  • Switching operations in consumer electronics
  • Driver circuits in display technology
  • Power management in portable devices
  • Control circuits in industrial systems

With its combination of features, the BCW30LT1G provides designers with a flexible and reliable component for their electronic designs. The transistor's small size, power handling, and broad operating temperature range make it a versatile choice for both simple and complex circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2067 $50.6415
590+ $0.1696 $100.0640
915+ $0.1643 $150.3345
1,260+ $0.1590 $200.3400
1,630+ $0.1537 $250.5310
2,180+ $0.1378 $300.4040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,805 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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