ON Semiconductor BD241CTU Power Transistor

The ON Semiconductor BD241CTU is a robust bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This power transistor is part of ON Semiconductor's esteemed semiconductor product line, known for its reliability and performance across various electronic circuits.

Key Features:

• Type: NPN
• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 3A
• Total Power Dissipation (Ptot): 30W
• DC Current Gain (hFE): 30 at 3A
• Operating Junction Temperature Range: -65°C to 150°C
• Package: TO-220

The BD241CTU transistor is designed to handle a collector-emitter voltage of up to 100V and a collector current of up to 3A, making it an excellent choice for medium power applications. Its total power dissipation capability of 30W allows it to handle significant power levels without overheating, ensuring stable operation in a variety of conditions.

The device boasts a DC current gain (hFE) of 30 when operating at a collector current of 3A, providing a good level of amplification while maintaining signal integrity. Its wide operating junction temperature range from -65°C to 150°C offers flexibility for use in environments with varying temperature conditions.

The BD241CTU transistor comes in a TO-220 package, a widely used and easily mountable form factor that provides excellent thermal performance and is compatible with a broad range of PCB layouts. This package ensures that the device can be easily integrated into your electronic designs while providing reliable thermal management.

Whether you are developing power regulators, drivers for motors, or amplifiers, the ON Semiconductor BD241CTU is a dependable component that can elevate the performance and reliability of your electronic projects. With its robust construction and versatile application range, this power transistor is an essential building block for engineers and hobbyists alike.