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BSS63LT1G

Part No BSS63LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 0.1A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 250mV @ 2.5mA, 25mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 30 @ 25mA, 1V
Maximum Power Dissipation 225mW
Frequency - Transition 95MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 012160-BSS63LT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian BSS63LT1G CAD Model

Description

ON Semiconductor BSS63LT1G N-Channel Logic Level Enhancement Mode Field Effect Transistor

The BSS63LT1G is a high-performance N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This small-signal MOSFET is a versatile component suitable for a wide range of applications, including load switch, power management, and logic level gate drive circuits.

Constructed with ON Semiconductor's advanced technology, the BSS63LT1G offers a robust and reliable solution for designers looking to optimize their circuit designs for efficiency and performance. The device features a low on-resistance (R<sub>DS(on)) which minimizes conduction losses, and its logic-level gate drive allows for direct operation from low-voltage logic circuits without the need for level shifters.

Key Specifications:

  • Drain-Source Voltage (V<sub>DSS): 60V
  • Continuous Drain Current (I<sub>D): 115 mA
  • Power Dissipation (P<sub>D): 225 mW
  • Low Gate Threshold Voltage (V<sub>GS(th))
  • Low Input Capacitance (C<sub>iss)
  • Fast Switching Speed
  • High Input Impedance
  • RoHS Compliant

The BSS63LT1G is housed in a compact SOT-23 package, making it ideal for space-constrained applications. Its small footprint does not compromise its electrical performance, which is characterized by high-speed switching and low gate charge, facilitating efficient operation in high-frequency circuits. The device is also characterized by a low threshold voltage, ensuring that it can be easily controlled by a wide range of drive voltages, making it highly compatible with modern microcontrollers and logic circuits.

ON Semiconductor's commitment to environmental sustainability is evident in the BSS63LT1G's RoHS compliance, ensuring that no hazardous substances are used in its manufacturing. This commitment extends to the performance of the device, which helps to reduce power consumption and heat generation in electronic systems, contributing to the development of greener products.

Whether you're designing power supplies, motor controllers, or looking to switch or amplify signals, the BSS63LT1G from ON Semiconductor is a reliable and efficient choice that combines performance with environmental responsibility.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,205+ $0.0416 $50.1280
2,565+ $0.0390 $100.0350
3,980+ $0.0377 $150.0460
5,715+ $0.0350 $200.0250
7,420+ $0.0337 $250.0540
9,260+ $0.0324 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,000 pieces
MOQ: 1205 pcs
Order Increment : 1 pcs
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