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BSV52LT1G

Part No BSV52LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 12V 0.1A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 10mA, 1V
Maximum Power Dissipation 225mW
Frequency - Transition 400MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 102565-BSV52LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSV52LT1G CAD Model

Description

The ON Semiconductor BSV52LT1G is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is well-suited for amplification and switching applications due to its excellent hFE linearity and high current gain bandwidth product. It is commonly employed in signal processing, power management, and other general-purpose applications.

Key Features

  • High Current Gain Bandwidth Product: The BSV52LT1G offers a high fT, making it suitable for applications that require a fast response time.
  • Low Collector-Emitter Saturation Voltage: This feature allows for efficient operation at low voltage levels, reducing power consumption and heat generation.
  • Complementary PNP Type Available: The BSV52LT1G has a complementary PNP transistor available, making it ideal for push-pull amplifier applications.
  • Surface Mount Package: The SOT-23 package is compact and suitable for automated assembly processes, making it a great choice for high-volume production.
  • RoHS Compliant: The product complies with the Restriction of Hazardous Substances Directive, making it environmentally friendly and suitable for use in a wide range of markets.

Applications

The BSV52LT1G is designed for versatile use in various electronic circuits. Its main applications include:

  • Signal Processing
  • Audio Amplifiers
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits
  • Power Management Functions

Specifications

Parameter Value Collector-Emitter Voltage (Vceo) 60V Collector Current (Ic) 500 mA DC Current Gain (hFE) 100 to 300 Power Dissipation (Pd) 225 mW Operating Temperature Range -55°C to +150°C

Overall, the ON Semiconductor BSV52LT1G is a reliable and efficient choice for designers looking for a general-purpose NPN transistor with a balance of performance and compact packaging.

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Pricing & Ordering

Quantity Unit Price Ext. Price
900+ $0.0644 $57.9600
2,185+ $0.0529 $115.5865
3,380+ $0.0513 $173.3940
4,655+ $0.0497 $231.3535
6,025+ $0.0480 $289.2000
8,065+ $0.0430 $346.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,300 pieces
MOQ: 900 pcs
Order Increment : 1 pcs
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