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DTA123EM3T5G

Part No DTA123EM3T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 260MW SOT723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 8 @ 5mA, 10V
Max Vce (sat) 250mV @ 5mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 260mW
Mounting SMD (SMT)
Case / Package SOT-723
Win Source Part Number 108224-DTA123EM3T5G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DTA123EM3T5G CAD Model

Description

Introducing the DTA123EM3T5G Transistor from ON Semiconductor

ON Semiconductor's DTA123EM3T5G is a cutting-edge PNP bipolar digital transistor designed to deliver exceptional performance and reliability for a wide range of applications. This innovative component is engineered to provide designers with a compact, efficient, and versatile solution for driving and switching operations within electronic circuits.

Key Features

  • Integrated Bias Resistor: The DTA123EM3T5G comes with a built-in resistor, which simplifies circuit design by reducing component count and saving valuable board space.
  • High Current Gain: Boasting a high current gain (hFE), this transistor ensures efficient current amplification, making it ideal for low-level signal applications.
  • Low V<sub>CE Saturation Voltage: The device features a low collector-emitter saturation voltage, which enhances power efficiency by minimizing voltage drop and power loss during operation.
  • Robust Performance: Fabricated with ON Semiconductor's state-of-the-art manufacturing processes, the DTA123EM3T5G is built to deliver reliable performance even under demanding conditions.
  • Surface-Mount Package: Encased in an SOT-23 package, this transistor is suitable for automated assembly processes and is ideal for use in compact and densely populated PCBs.

Applications

The DTA123EM3T5G transistor is versatile and can be utilized in various applications, such as:

  • Inverter circuits
  • Interface circuits
  • Driver circuits for relays, lamps, and LEDs
  • Signal processing
  • Power management functions

Technical Specifications

With a collector current rating of up to 100 mA and a power dissipation of 200 mW, the DTA123EM3T5G is capable of handling moderate power applications. The built-in resistor has a value of 4.7 kΩ, which is optimized for typical digital transistor applications.

Quality and Environmental Compliance

ON Semiconductor is committed to environmental stewardship and ensures that the DTA123EM3T5G complies with RoHS and Halogen Free standards, making it suitable for use in environmentally sensitive products.

In summary, the DTA123EM3T5G from ON Semiconductor is an exceptional choice for designers seeking a high-performance PNP bipolar digital transistor. Its integrated bias resistor, high current gain, and low saturation voltage make it a powerful component for a variety of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,500+ $0.0386 $57.9000
3,640+ $0.0318 $115.7520
5,640+ $0.0307 $173.1480
7,785+ $0.0297 $231.2145
10,045+ $0.0288 $289.2960
13,455+ $0.0258 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 1500 pcs
Order Increment : 1 pcs
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