The ECH8601R-TL-E from ON Semiconductor is a high-performance, P-Channel MOSFET designed for power management applications. This device is part of ON Semiconductor's extensive portfolio of MOSFETs that offer designers a wide range of voltage ratings, current ratings, and package options.

Key Features

• Low On-Resistance: The MOSFET features a low on-resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for power-intensive applications.
• High-Speed Switching: With its fast switching capabilities, the ECH8601R-TL-E ensures low switching losses and is well-suited for high-frequency applications.
• Advanced Trench Technology: The device utilizes advanced trench technology to provide superior performance in a compact form factor.
• Lead-Free and RoHS Compliant: The MOSFET is lead-free and RoHS compliant, ensuring it meets the latest environmental standards for electronic components.

Applications

The ECH8601R-TL-E P-Channel MOSFET is commonly used in a variety of applications, including:

• Power Management Circuits
• Load Switches
• Battery Management Systems
• DC/DC Converters
• Portable Devices

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -30 V Continuous Drain Current (I<sub>D) -8 A Power Dissipation (P<sub>D) 1.4 W R<sub>DS(on) 20 mΩ Package TPH3

Package and Availability

The ON Semiconductor ECH8601R-TL-E is available in a compact TPH3 package, which is optimized for minimal footprint and high thermal performance. The product is available for order through ON Semiconductor's distribution network, ensuring easy access and prompt delivery for manufacturers and designers.