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FCH041N65EFLN4

Part No FCH041N65EFLN4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 76A TO247-4  /  N-Channel 650 V 76A (Tc) 595W (Tc) Through Hole TO-247-4
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series FRFET®, SuperFET® II
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 5V @ 7.6mA
Gate Charge (Qg) (Max) @ Vgs 298 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12560 pF @ 100 V
Power Dissipation (Max) 595W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
Base Product Number FCH041
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 450
Win Source Part Number 1022082-FCH041N65EFLN4
Ultra Librarian 3D Model Ultra Librarian FCH041N65EFLN4 CAD Model

Description

ON Semiconductor FCH041N65EFLN4 MOSFET Overview

The FCH041N65EFLN4 from ON Semiconductor is a state-of-the-art N-Channel MOSFET that offers high efficiency and reliability for a variety of power applications. This power MOSFET is designed using ON Semiconductor’s advanced PowerTrench® technology, which provides significant advantages in terms of on-resistance and switching performance.

With a drain-to-source voltage (V<sub>DS) of 650V and a continuous drain current (I<sub>D) of 86A at 25°C, this device is capable of handling high power densities, making it an excellent choice for high-performance power conversion systems. The FCH041N65EFLN4 is also characterized by a low gate charge (Q<sub>G), which translates to reduced switching losses and improved overall system efficiency.

Key Features

  • 650V Drain-to-Source Voltage (V<sub>DS)
  • 86A Continuous Drain Current (I<sub>D) at 25°C
  • Low On-Resistance (R<sub>DS(on))
  • Fast Switching Speed
  • Low Gate Charge (Q<sub>G)
  • TO-247 Package for Excellent Heat Dissipation

The device's low on-resistance (R<sub>DS(on)) minimizes conduction losses, which is critical for applications where efficiency is paramount. Additionally, the fast switching speed of the FCH041N65EFLN4 makes it suitable for high-frequency circuits, further enhancing its performance in applications such as switching power supplies, motor drives, and power inverters.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverter Systems
  • Power Factor Correction (PFC) Circuits

The FCH041N65EFLN4 is housed in a TO-247 package, which offers excellent thermal management properties. This ensures that the MOSFET can operate reliably even under high temperature and stress conditions. The robustness of the package, combined with the MOSFET's inherent electrical characteristics, makes it a durable and long-lasting solution for demanding power applications.

In summary, the FCH041N65EFLN4 from ON Semiconductor is a high-performance N-Channel MOSFET that offers superior efficiency, fast switching, and high reliability, making it an ideal choice for designers looking to improve the performance and robustness of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1793 $58.5102
33+ $3.4292 $113.1636
51+ $3.3220 $169.4220
70+ $3.2148 $225.0360
91+ $3.1078 $282.8098
121+ $2.7862 $337.1302
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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