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FCI25N60N

Part No FCI25N60N
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ | MOSFET N-CH 600V 25A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 25A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 125mOhm at 12.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 74nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 3352pF at 100V
Power Dissipation (Maximum) 216W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK (TO-262)
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1173613-FCI25N60N
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FCI25N60N CAD Model

Description

The FCI25N60N is a high-performance N-Channel MOSFET brought to you by ON Semiconductor, a leader in power and signal management solutions. This device is designed to meet the stringent requirements of modern electronic circuits, offering a perfect combination of low on-resistance and high switching speed. It is ideal for a wide range of applications, including power supplies, inverters, and motor control systems.

Key Features

  • High Current Capability: The FCI25N60N is capable of handling continuous drain currents up to 25A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of just 0.145 ohms, this MOSFET ensures minimal power loss and improved efficiency in your circuit designs.
  • High Voltage Threshold: It can withstand drain-to-source voltages of up to 600V, providing a robust solution for circuits that experience high voltage transients.
  • Fast Switching: The device features a fast switching speed, which is essential for reducing switching losses and improving the performance of power conversion systems.
  • Reduced Gate Charge: A low gate charge facilitates faster switching and reduces the power required to drive the MOSFET, further enhancing the overall efficiency of the device.

Applications

The versatility of the FCI25N60N makes it suitable for various high-performance applications. These include:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Power Inverter Systems
  • High-Efficiency DC-DC Converters
  • Motor Drives and Inverters
  • LED Lighting

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The FCI25N60N is no exception, as it is manufactured with state-of-the-art technology and subjected to rigorous testing to ensure it meets the requirements of the most demanding applications.

With its robust design and superior electrical characteristics, the FCI25N60N from ON Semiconductor stands out as a top choice for designers looking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0427 $60.5124
28+ $4.1384 $115.8752
44+ $4.0090 $176.3960
60+ $3.8796 $232.7760
77+ $3.7503 $288.7731
104+ $3.3622 $349.6688
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,214 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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