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Same model may have multiple batches, images only for reference.
IRF7807D2TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7807D2TRPBF

Part No IRF7807D2TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 5V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001938-IRF7807D2TRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7807D2TRPBF CAD Model

Description

The Infineon Technologies 001938-IRF7807D2TRPBF is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.3A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 17nC @ 5V
  • Maximum Rds On at Id,Vgs: 25 mOhm @ 7A, 4.5V
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)

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