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FCP190N65S3

Part No FCP190N65S3
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 650V 17A TO220-3 / isc N-Channel MOSFET Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 190mOhm at 8.5A, 10V
Vgs(th) (Maximum) at Id 4.5V at 1.7mA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1350pF at 400V
Power Dissipation (Maximum) 144W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 800
MSL Level Not Applicable
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 807489-FCP190N65S3
Ultra Librarian 3D Model Ultra Librarian FCP190N65S3 CAD Model

Description

The FCP190N65S3 from ON Semiconductor is an advanced SuperFET® III MOSFET that utilizes the latest in silicon technology to provide users with high performance and efficiency. This N-Channel MOSFET is designed to meet the rigorous demands of a variety of applications, including power supplies, lighting, industrial equipment, and more. With its robust design and state-of-the-art features, the FCP190N65S3 is a reliable choice for high-efficiency power conversion.

Key Features

  • High Voltage Capability: The device supports a drain-to-source voltage of 650V, making it suitable for high voltage applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 0.190Ω, the FCP190N65S3 ensures minimal conduction losses and improved power efficiency.
  • High Current Rating: This MOSFET can handle continuous drain currents up to 32A, allowing it to manage significant power levels.
  • Reduced Switching Losses: Fast switching speeds and reduced recovery charges lead to lower switching losses, contributing to the overall efficiency of the system.
  • Enhanced Thermal Performance: The FCP190N65S3 boasts an excellent thermal performance with a maximum junction temperature of 150°C.
  • 100% Avalanche Tested: Ensures reliability and robustness in harsh conditions by withstanding high energy pulses in the avalanche and commutation modes.

Applications

ON Semiconductor's FCP190N65S3 is versatile and can be used across a wide range of applications. It is particularly well-suited for Power Supply Units (PSUs), Uninterruptible Power Supplies (UPS), DC-AC Inverters for solar power systems, and High Power Density Applications. Its reliability and efficiency also make it an excellent choice for Switch Mode Power Supplies (SMPS) and Lighting Applications such as LED lighting solutions.

Conclusion

The FCP190N65S3 N-Channel MOSFET by ON Semiconductor represents a leap forward in power semiconductor technology, providing high efficiency, reliability, and performance for a variety of power management applications. Engineers and designers seeking a robust MOSFET solution will find the FCP190N65S3 to be an excellent choice for their high voltage and high power needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4581 $51.6201
50+ $2.0169 $100.8450
77+ $1.9539 $150.4503
106+ $1.8909 $200.4354
137+ $1.8278 $250.4086
184+ $1.6387 $301.5208
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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