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BCW66HTA

Part No BCW66HTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.8A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 20nA
Typical Gain (hFE) (Min) 250 @ 100mA, 1V
Maximum Power Dissipation 330mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 011217-BCW66HTA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCW66HTA CAD Model

Description

Introducing the BCW66HTA NPN Transistor from Diodes Incorporated

The BCW66HTA from Diodes Incorporated is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile semiconductor device is ideal for small signal amplification and switching, offering designers a reliable and efficient solution for their circuit requirements.

Key Features

  • High Current Gain: The BCW66HTA boasts a high current gain (hFE), which makes it suitable for amplification purposes in audio, signal processing, and other applications that require efficient current amplification.
  • Low Voltage Operation: With a collector-emitter voltage (VCEO) of 45V, it operates effectively at low voltages, making it an excellent choice for battery-powered devices and portable electronics.
  • Low Noise: The transistor is designed to produce minimal noise, which is crucial for applications where signal integrity is paramount.
  • High-Speed Switching: The BCW66HTA is capable of high-speed switching, which is beneficial for digital circuits and pulse applications.
  • Surface-Mount Package: It comes in a compact SOT-23 package, which is well-suited for surface-mount technology (SMT), allowing for efficient use of PCB space and easier manufacturing.

Applications

The BCW66HTA is highly versatile and can be used in various applications, including but not limited to:

  • General-purpose amplifiers
  • Audio amplifiers
  • Signal processing
  • Switching circuits
  • Driver stages in hi-fi amplifiers and television circuits

Product Specifications

The BCW66HTA has the following specifications:

  • Collector-Emitter Voltage (VCEO): 45V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 250mW
  • DC Current Gain (hFE): 420 at IC = 2mA, VCE = 5V
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The BCW66HTA is manufactured with strict quality control procedures, ensuring that it meets the industry standards for reliability and performance. Whether you're designing consumer electronics or industrial control systems, the BCW66HTA is a trusted component that can help you achieve your design objectives.

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Pricing & Ordering

Quantity Unit Price Ext. Price
760+ $0.0658 $50.0080
1,855+ $0.0540 $100.1700
2,870+ $0.0523 $150.1010
3,955+ $0.0506 $200.1230
5,115+ $0.0489 $250.1235
6,835+ $0.0439 $300.0565
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,350 pieces
MOQ: 760 pcs
Order Increment : 1 pcs
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