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FCPF125N65S3

Part No FCPF125N65S3
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A TO220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 24A (Tc) 38W (Tc) Through Hole TO-220F
Manufacturer ON Semiconductor
Series SuperFET® III
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3 Full Pack
Case / Package TO-220F
Family Name FCPF125
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 871565-FCPF125N65S3
Ultra Librarian 3D Model Ultra Librarian FCPF125N65S3 CAD Model

Description

ON Semiconductor FCPF125N65S3 N-Channel MOSFET

The FCPF125N65S3 is a cutting-edge N-Channel MOSFET brought to you by ON Semiconductor, a leading figure in the semiconductor industry. This high-performance MOSFET is designed to meet the rigorous demands of today's energy-efficient power conversion applications. With its advanced technology and superior design, the FCPF125N65S3 is an ideal choice for a wide range of uses, including power supplies, inverters, and motor drives.

At the heart of the FCPF125N65S3's exceptional performance is its 650V SuperFET III MOSFET technology. This technology is synonymous with low on-resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), leading to significantly lower switching losses. The device is capable of handling continuous drain currents up to 22A, making it suitable for high-power applications.

The FCPF125N65S3 comes in a robust TO-220-3 package, which is well-known for its durability and ease of mounting. This package ensures a high level of heat dissipation, allowing the MOSFET to operate reliably even under high-temperature conditions. Additionally, the package is designed to provide excellent electrical isolation and mechanical protection for the silicon die inside.

Key features of the FCPF125N65S3 include a max junction temperature of 150°C, which provides a wide operating temperature range for various applications. The device also boasts a low total gate charge of 47nC, which contributes to its high-speed switching capabilities. Furthermore, its low effective output capacitance (C<sub>oss eff) ensures high efficiency in power conversion applications.

ON Semiconductor's commitment to environmental sustainability is reflected in the FCPF125N65S3, as it is compliant with RoHS regulations, ensuring that no hazardous substances are used in its manufacture. This compliance not only makes the FCPF125N65S3 an environmentally friendly choice but also ensures its global acceptance in electronic markets.

In summary, the FCPF125N65S3 from ON Semiconductor is a high-performance, efficient, and reliable N-Channel MOSFET that offers advanced features for modern power conversion applications. Its robust design and superior electrical characteristics make it an excellent choice for designers looking to enhance the efficiency and reliability of their power systems.

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