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FCPF190N65FL1

Part No FCPF190N65FL1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.6A TO220F / N-Channel 650 V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr ON Semiconductor
Series SuperFET® II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3055 pF @ 100 V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
Base Product Number FCPF190
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000 pcs
Win Source Part Number 1382070-FCPF190N65FL1
Ultra Librarian 3D Model Ultra Librarian FCPF190N65FL1 CAD Model

Description

The FCPF190N65FL1 is a state-of-the-art power MOSFET designed and manufactured by ON Semiconductor, a leading innovator in energy-efficient electronics. This high-performance field-effect transistor (FET) is engineered to meet the demanding requirements of modern power conversion applications, providing a combination of low on-resistance and high switching speed.

Key Features

  • High Current Capability: With a continuous drain current of 190 A, the FCPF190N65FL1 is capable of handling high-current applications with ease, making it ideal for power supply units and motor drives.
  • Low On-Resistance: The device boasts a low on-resistance of 65 mΩ, which minimizes conduction losses and improves overall efficiency in power conversion systems.
  • High Voltage Rating: With a drain-to-source voltage (Vds) rating of 650V, this MOSFET can easily manage high voltage operations, suitable for industrial power applications.
  • Fast Switching Performance: The FCPF190N65FL1 features fast switching performance, which is critical for reducing switching losses and improving the efficiency of power electronic systems.
  • Robust Body Diode: The built-in body diode is rugged and can handle high-speed switching, providing reliability in applications such as synchronous rectification.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Power Inverters
  • Motor Drives
  • Power Factor Correction (PFC) Circuits

Advanced Technology

The FCPF190N65FL1 is built using ON Semiconductor's proprietary PowerTrench® technology, which allows for the device's low on-resistance and high switching performance. This technology also helps in reducing gate charge and capacitances, further enhancing the MOSFET's efficiency.

Package and Environmental Compliance

The MOSFET is housed in a TO-220 package, which is known for its high thermal performance and is widely used in commercial and industrial applications. Additionally, the FCPF190N65FL1 is compliant with RoHS regulations, ensuring that it meets global standards for environmental safety and the restriction of hazardous substances.

With its robust design, high efficiency, and reliable performance, the FCPF190N65FL1 from ON Semiconductor is a premier choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5422 $58.4706
56+ $2.0859 $116.8104
86+ $2.0207 $173.7802
119+ $1.9554 $232.6926
153+ $1.8903 $289.2159
205+ $1.6948 $347.4340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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